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| Diodes DA227/DAN202K/DAN202U/DAN222 DAP202K/DAP202U/DAP222 Switching diode DA227 DAN202K / DAN202U / DAN222 DAP202K / DAP202U / DAP222 Application Ultra high speed switching External dimensions (Units : mm) DAN202K / DAP202K DAN202U / DAP202U 0.4 0.30.1 0.150.05 (All pins have the same dimensions) (All pins have the same dimensions) Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC - 59 JEDEC : SOT - 346 DA227 ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 DAN222 / DAP222 Marking DAN222 DAN202U DAN202K DAP222 DAP202U DAP202K DA227 N 1.250.1 0.6 0.30.1 0.65 0.20.1 0.90.1 0.7 1.250.1 1.60.2 1.00.1 +0.1 0.2 -0.05 0~0.1 0.5 0.5 +0.1 0.2 -0.05 0.80.1 1.60.2 0.70.1 0.550.1 P 0.20.1 0.20.1 2.10.1 0~0.1 0.1Min. 0.65 0.65 1.30.1 2.00.2 0.150.05 0.3 +0.1 -0.05 0.150.05 ROHM : UMD4 EIAJ : SC - 82 JEDEC : SOT - 343 ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT - 416 0.1Min. N20 0.1Min. +0.1 -0.05 0.15 0.3~0.6 Features 1) Four types of packaging are available. 2) High speed. (trr=1.5ns Typ.) 3) Suitable for high packing density layout. 4) High reliability. 2.90.2 1.90.2 0.95 0.95 1.1 +0.2 -0.1 2.00.2 1.30.1 0.65 0.65 0.3 0.90.1 0.6 0.80.1 2.80.2 +0.2 -0.1 1.250.1 2.10.1 0~0.1 1.6 0~0.1 +0.1 -0.06 Diodes Circuits DA227/DAN202K/DAN202U/DAN222 DAP202K/DAP202U/DAP222 DAN202K DAN202U DAN222 DAP202K DAP202U DAP222 DA227 Absolute maximum ratings (Ta=25C) Type DAN202K DAP202K DAN202U DAP202U DAN222 DAP222 DA227 Junction Storage Peak reverse DC reverse Peak forward Mean rectifying Surge current Power dissipation temperature temperature voltage voltage current current (1s) (TOTAL) Tj (C) Tstg (C) VRM (V) VR (V) IFM (mA) IO (mA) Isurge (A) Pd(mW) 80 80 80 80 80 80 80 80 80 80 80 80 80 80 300 300 300 300 300 300 300 100 100 100 100 100 100 100 4 4 4 4 4 4 4 200 200 200 200 150 150 150 150 150 150 150 150 150 150 P/N Type N P N P N P N -55~+150 -55~+150 -55~+150 -55~+150 -55~+150 -55~+150 -55~+150 Electrical characteristics (Ta=25C) Forward voltage Type VF (V) Max. 1.2 1.2 1.2 1.2 1.2 1.2 1.2 Cond. IF (mA) 100 100 100 100 100 100 100 Reverse current IR (A) Max. 0.1 0.1 0.1 0.1 0.1 0.1 0.1 Cond. VR (V) 70 70 70 70 70 70 70 Capacitance between terminals CT (pF) Max. 3.5 3.5 3.5 3.5 3.5 3.5 3.5 Cond. VR (V) f (MHz) 6 6 6 6 6 6 6 1 1 1 1 1 1 1 Reverse recovery time trr (ns) Max. 4 4 4 4 4 4 4 Cond. VR (V) 6 6 6 6 6 6 6 IF (mA) 5 5 5 5 5 5 5 DAN202K DAP202K DAN202U DAP202U DAN222 DAP222 DA227 Diodes Electrical characteristic curves (Ta=25C) POWER DISSIPATION : Pd / Pd Max.(%) DA227/DAN202K/DAN202U/DAN222 DAP202K/DAP202U/DAP222 50 125 1000 Ta=100C FORWARD CURRENT : IF (mA) 100 REVERSE CURRENT : IR (nA) 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ta=85C 50C 25C 0C -30C 100 75C 75 10 50C 25C 50 1 0C -25C 25 0.1 0 0 25 50 75 100 125 150 0.01 0 10 20 30 40 50 AMBIENT TEMPERATURE :Ta (C) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.1 Power attenuation curve Fig.2 Forward characteristics (P Type) Fig.3 Reverse characteristics (P Type) 1000 FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (nA) 20 10 5 2 1 0.5 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Ta=85C 50C 25C 0C -30C Ta=100C 75C 50C CAPACITANCE BETWEEN TERMINALS : CT (pF) 50 f=1MHz 4 100 10 25C 0C -25C 1 2 P Type 0.1 N Type 0.01 0 10 20 30 40 50 60 70 80 0 0 2 4 6 8 10 12 14 16 18 20 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.4 Forward characteristics (N Type) Fig.5 Reverse characteristics (N Type) Fig.6 Capacitance between terminals characteristics 10 (ns) 0.01F VR=6V D.U.T. 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 REVERSE RECOVERY TIME : trr 5 PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE P Typ e INPUT N Type 8 9 10 100ns FORWARD CURRENT : IF (mA) Fig.7 Reverse recovery time OUTPUT trr 0 Fig.8 Reverse recovery time (trr) measurement circuit 0.1IR IR This datasheet has been download from: www..com Datasheets for electronics components. |
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